Energy band diagram of device-grade silicon nanocrystals

Energy band diagram of device-grade silicon nanocrystals.

Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, ...

Supporting Information Energy Band Structure of Device-Grade Silicon Nanocrystals

Silicon Nanocrystals

Silicon has many advantages over other semiconductor materials: low cost, nontoxicity, practically unlimited availability, and decades of experience in purification, growth and device fabrication. It is used for almost all modern electronic devices. However, the indirect energy gap in bulk crystalline Si makes it unable to emit light efficiently and thus unsuitable for optoelectronic applicatio...

Production of ordered silicon nanocrystals by low-energy ion sputtering

We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si ~100! substrate with 1.2 keV Ar ions at normal incidence. Atomic force and high-resolution transmission electron microscopies show that the silicon structures are crystalline, display homogeneous height, and spontaneously arrange into short-range hexagonal ordering. Under prolonged irradi...

Wavelet Method for Computing Energy Band Diagram of Semiconductors

A wavelet expansion is applied for solving Schrödinger equation in order to compute band structure of an electronic crystal. In this paper we have used this method for finding band structure of one dimensional arbitrary potential. As discussed here, this algorithm could be easily applied to twoor three-dimensional arbitrary potentials. This paper is emphasizing on revealing the mathematical asp...